Band engineered high-K tunnel oxides for non-volatile memory

Details Band engineered high-K tunnel oxides for non-volatile memory Band engineered high-K tunnel oxides for non-volatile memory

2011-01-25

2011-01-25

Dang, Phuc T (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S310000, C257S324000

Reexamination Certificate

active

07875923

ABSTRACT:
A non-volatile memory cell that has a charge source region, a charge storage region, and a crested tunnel barrier layer that has a potential energy profile which peaks between the charge source region and the charge storage region. The tunnel barrier layer has multiple high-K dielectric materials, either as individual layers or as compositionally graded materials.

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