Ballasting MOSFETs using staggered and segmented diffusion...

Details Ballasting MOSFETs using staggered and segmented diffusion... Ballasting MOSFETs using staggered and segmented diffusion...

2005-08-09

2005-08-09

Tran, Minhloan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S355000, C257S357000, C361S056000

Reexamination Certificate

active

06927458

ABSTRACT:
An ESD protection circuit includes a field effect transistor device configured such that current flowing through a hot spot filament formed in a gate region must flow in a non-linear path from a drain contact to a source contact. Source diffusion areas are segmented and staggered relative to drain diffusion areas in order to provide the non-linear current path.

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