Ball limiting metallurgy, interconnection structure...

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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Reexamination Certificate

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10724938

ABSTRACT:
A ball-limiting metallurgy includes a substrate, a barrier layer formed over the substrate, an adhesion layer formed over the barrier layer, a first solderable layer formed over the adhesion layer, a diffusion barrier layer formed over the adhesion layer, and a second solderable layer formed over the diffusion barrier layer.

REFERENCES:
patent: 6730982 (2004-05-01), Barth et al.
patent: 2002/0123220 (2002-09-01), Sambucetti et al.
patent: 2002/0142592 (2002-10-01), Barth et al.
patent: 2003/0127743 (2003-07-01), Brintzinger
patent: 2003/0219966 (2003-11-01), Jin et al.
patent: 2004/0178503 (2004-09-01), Jin et al.
patent: 2005/0062169 (2005-03-01), Dubin et al.

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