Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-03-29
2005-03-29
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S108000, C438S456000, C438S673000, C438S701000, C438S945000, C438S978000
Reexamination Certificate
active
06872650
ABSTRACT:
A ball electrode forming method comprises steps of: preparing a semiconductor apparatus having a plurality of electrode pads; arranging a mask having an upper surface and a lower surface, an area in the lower surface being larger than an area in the upper surface, and a plurality of openings extended from the upper surface to the lower surface, on a surface of the semiconductor apparatus having the electrode pads formed thereon so that the surface and the lower surface can face each other; arranging solder balls on the electrode pads arranged in the openings from the upper surface side of the mask; and electrically connecting the solder balls to the electrode pads to form ball electrodes. Thus, regarding a method for forming a ball electrode in a semiconductor apparatus having a BGA structure, an efficient ball electrode forming method is employed to prevent omission of a ball electrode.
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patent: 07-212021 (1995-08-01), None
Fourson George
Garcia Joannie Adelle
Oki Electric Industry Co. Ltd.
Rabin & Berdo P.C.
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