Backside wafer polishing for improved photolithography

Details Backside wafer polishing for improved photolithography Backside wafer polishing for improved photolithography

1997-02-03

1998-07-14

Baxter, Janet C.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

430320, 430331, G03C 500, G03F 700

Patent

active

057802041

ABSTRACT:
The accuracy of photolithographic processing, particularly in forming small diameter through holes and/or trenches in a dielectric layer, is improved by polishing the wafer backside prior to photolithography. It was found that particles adhering to and/or scratches on the wafer backside resulting from prior processing steps cause inaccurate photolithographic processing, particularly at a submicron level. Backside polishing, as by chemical-/mechanical polishing, removes such adhering particles and/or scratches, thereby improving photolithographic accuracy.

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Kenney et al., "A Buried-Plate Trench Cell for a 64-Mb DRAM," 1992 Symposium on VLSI Technology Digest of Technical Papers, IEEE, pp. 14-15.

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