Chemistry: electrical and wave energy – Apparatus – Coating – forming or etching by sputtering
Reexamination Certificate
2011-08-09
2011-08-09
McDonald, Rodney G (Department: 1724)
Chemistry: electrical and wave energy
Apparatus
Coating, forming or etching by sputtering
C204S192340
Reexamination Certificate
active
07993504
ABSTRACT:
A method and system for backside unlayering a semiconductor device to expose FEOL semiconductor features of the device for subsequent electrical and/or physical probing. A window is formed within a backside substrate layer of the semiconductor. A collimated ion plasma is generated and directed so as to contact the semiconductor only within the backside window via an opening in a focusing shield. This focused collimated ion plasma contacts the semiconductor, only within the window, while the semiconductor is simultaneously being rotated and tilted by a temperature controlled stage, for uniform removal of semiconductor layering such that the semiconductor features, in a location on the semiconductor corresponding to the backside window, are exposed. Backside unlayering of the invention may be enhanced by CAIBE processing.
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Kane Terence L.
Miles Darrell L.
Sylvestri John D.
Tenney Michael P.
Capella Steven
DeLio & Peterson LLC
International Business Machines - Corporation
McDonald Rodney G
Nowak Kelly M.
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