Backside processing method

Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates

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Details

438458, 438459, 438464, H01L 21301

Patent

active

059279931

ABSTRACT:
A method useful in the backside processing of semiconductor wafers includes providing a semiconductor wafer having a first surface that has been substantially processed. The processed first surface of the semiconductor wafer is bonded to a handle wafer. Once bonded to the handle wafer, backside processing may be performed on the wafer. Following backside processing, the wafer is sawn while still bonded to the handle wafer. The individual dice are then removed from the handle wafer. This process involves fewer handling steps of the semiconductor wafer and the handle wafer provides support to the semiconductor wafer during backside processing thereby reducing opportunities for breakage.

REFERENCES:
patent: 4946716 (1990-08-01), Corrie
patent: 5165283 (1992-11-01), Kurtz et al.

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