Backside illuminated imaging sensor with vertical pixel sensor

Details Backside illuminated imaging sensor with vertical pixel sensor Backside illuminated imaging sensor with vertical pixel sensor

2008-10-28

2011-11-22

Fahmy, Wael (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

C257S437000, C257SE31127

Reexamination Certificate

active

08063465

ABSTRACT:
A backside illuminated imaging sensor includes a vertical stacked sensor that reduces cross talk by using different silicon layers to form photodiodes at separate levels within a stack (or separate stacks) to detect different colors. Blue light-, green light-, and red light-detection silicon layers are formed, with the blue light detection layer positioned closest to the backside of the sensor and the red light detection layer positioned farthest from the backside of the sensor. An anti-reflective coating (ARC) layer can be inserted in between the red and green light detection layers to reduce the optical cross talk captured by the red light detection layer. Amorphous polysilicon can be used to form the red light detection layer to boost the efficiency of detecting red light.

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