Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-08-02
2011-08-02
Sandvik, Benjamin P (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S233000, C257S291000, C257S433000, C257SE27130, C257SE27133, C257SE25032, C438S048000, C438S072000, C438S073000
Reexamination Certificate
active
07989859
ABSTRACT:
A backside illuminated imaging sensor includes a semiconductor layer, a metal interconnect layer and a silicide light reflecting layer. The semiconductor layer has a front surface and a back surface. An imaging pixel that includes a photodiode region is formed within the semiconductor layer. The metal interconnect layer is electrically coupled to the photodiode region and the silicide light reflecting layer is coupled between the metal interconnect layer and the front surface of the semiconductor layer. In operation, the photodiode region receives light from the back surface of the semiconductor layer, where a portion of the received light propagates through the photodiode region to the silicide light reflecting layer. The silicide light reflecting layer is configured to reflect the portion of light received from the photodiode region.
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Mao Duli
Rhodes Howard E.
Tai Hsin-chih
Venezia Vincent
Blakely , Sokoloff, Taylor & Zafman LLP
Khan Farid
OmniVision Technologies Inc.
Sandvik Benjamin P
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