Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2011-02-15
2011-02-15
Soward, Ida M (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S447000, C257SE33068
Reexamination Certificate
active
07888763
ABSTRACT:
A backside illuminated imaging sensor includes a semiconductor layer and an infrared detecting layer. The semiconductor layer has a front surface and a back surface. An imaging pixel includes a photodiode region formed within the semiconductor layer. The infrared detecting layer is disposed above the front surface of the semiconductor layer to receive infrared light that propagates through the imaging sensor from the back surface of the semiconductor layer.
REFERENCES:
patent: 5188970 (1993-02-01), York et al.
patent: 5537146 (1996-07-01), Tohyama
patent: 5801400 (1998-09-01), Nishihata
patent: 6229165 (2001-05-01), Sakai et al.
patent: 6429036 (2002-08-01), Nixon et al.
patent: 6501065 (2002-12-01), Uppal et al.
patent: 6657194 (2003-12-01), Ashokan et al.
patent: 6797957 (2004-09-01), Kawakubo et al.
patent: 7005642 (2006-02-01), Nozu
patent: 7045785 (2006-05-01), Iida et al.
patent: 7145144 (2006-12-01), Nakaki et al.
patent: 7235832 (2007-06-01), Yaung
patent: 7259364 (2007-08-01), Lulé
patent: 7449357 (2008-11-01), Kim et al.
patent: 7531884 (2009-05-01), Kim
patent: 7535073 (2009-05-01), Ezaki
patent: 7588993 (2009-09-01), Liu et al.
patent: 7659595 (2010-02-01), Shiau et al.
patent: 7687872 (2010-03-01), Cazaux et al.
patent: 7714403 (2010-05-01), Lee et al.
patent: 7718965 (2010-05-01), Syllaios et al.
patent: 2007/0001100 (2007-01-01), Hsu et al.
patent: 2007/0091190 (2007-04-01), Iwabuchi et al.
patent: 2007/0259463 (2007-11-01), Abedini
patent: 2008/0017893 (2008-01-01), Cazaux et al.
patent: 2008/0224247 (2008-09-01), Hsu et al.
patent: 2009/0212385 (2009-08-01), Ohkubo et al.
patent: WO 97/18589 (1997-05-01), None
patent: WO 99/00848 (1999-01-01), None
PCT/US2008/088332—International Search Report and Written Opinion, mailed Mar. 4, 2009.
Rosan, K., “Hydrogenated Amorphous-Silicon Image Sensors,” IEEE Transactions on Electron Devices, vol. 36, No. 12, Dec. 1989, pp. 2923-2927.
Mao Duli
Qian Yin
Rhodes Howard E.
Tai Hsin-chih
Venezia Vincent
Blakely , Sokoloff, Taylor & Zafman LLP
OmniVision Technologies Inc.
Soward Ida M
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