Backside illuminated imaging sensor with backside P + doped...

Details Backside illuminated imaging sensor with backside P + doped... Backside illuminated imaging sensor with backside P + doped...

2008-06-17

2010-06-22

Dickey, Thomas L (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S082000, C257SE27133, C438S064000, C438S073000

Reexamination Certificate

active

07741666

ABSTRACT:
A backside illuminated imaging sensor includes a semiconductor layer having a P-type region. A frontside and backside P+doped layers are formed within the semiconductor layer. An imaging pixel having a photodiode is formed within the semiconductor layer, where the photodiode is an N−region formed within the P-type region of the semiconductor layer between the frontside P+doped layer and the backside P+doped layer.

REFERENCES:
patent: 4348690 (1982-09-01), Jastrzebski et al.
patent: 5688715 (1997-11-01), Sexton et al.
patent: 6429036 (2002-08-01), Nixon et al.
patent: 7005637 (2006-02-01), Costello et al.
patent: 2003/0103150 (2003-06-01), Catrysse et al.
patent: 2004/0188727 (2004-09-01), Patrick
patent: 2004/0251398 (2004-12-01), Mouli et al.
patent: 2006/0043519 (2006-03-01), Ezaki
patent: 2006/0118836 (2006-06-01), Rhodes
patent: 2006/0180885 (2006-08-01), Rhodes
patent: 2006/0186560 (2006-08-01), Swain et al.
patent: 2006/0197007 (2006-09-01), Iwabuchi et al.
patent: 2007/0218578 (2007-09-01), Lee et al.
patent: 2007/0259463 (2007-11-01), Abedini
patent: 1 612 863 (2006-01-01), None
patent: 1 681 721 (2006-07-01), None
Omnivision press-release dated by May 23, 2007 (see www.ovt.com/release.php?release=53&lang=english).
Micron press-release dated by May 18, 2006 (see http://www.micron.com/about
ews/pressrelease.aspx?id=CDCB9899EFA2B68E.
PCT/US2008/088254, PCT International Search Report and Written Opinion of the International Searching Authority, mailed Apr. 6, 2009, 10 pages.

Affiliated with

Also associated with

Rating

Backside illuminated imaging sensor with backside P + doped... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Backside illuminated imaging sensor with backside P + doped..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Backside illuminated imaging sensor with backside P + doped... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4204978