Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-06-27
2010-12-07
Lebentritt, Michael S (Department: 2829)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S451000, C257S455000, C257S460000, C257SE21122, C257SE27015, C257SE27112, C257SE27152, C257SE31084, C257SE31085, C257SE31093
Reexamination Certificate
active
07847326
ABSTRACT:
A backside illuminated image sensor includes a photodiode, formed below the top surface of a semiconductor substrate, for receiving light illuminated from the backside of the semiconductor substrate to generate photoelectric charges, a reflecting gate, formed on the photodiode over the front upper surface of the semiconductor substrate, for reflecting light illuminated from the backside of the substrate and receiving a bias to control a depletion region of the photodiode, and a transfer gate for transferring photoelectric charges from the photodiode to a sensing node of a pixel.
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English Translation of Office Action issued Aug. 14, 2009 in Chinese Patent Application 200810127544.
Lee Ju-Il
Park Sung-Hyung
Lebentritt Michael S
McAndrews Held & Malloy Ltd.
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