Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2011-01-25
2011-01-25
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S460000, C257SE31126
Reexamination Certificate
active
07875948
ABSTRACT:
A backside illuminated image sensor includes a substrate, a backside passivation layer disposed on backside of the substrate, and a transparent conductive layer disposed on the backside passivation layer.
REFERENCES:
patent: 4708766 (1987-11-01), Hynecek
patent: 4750980 (1988-06-01), Hynecek
patent: 5292682 (1994-03-01), Stevens et al.
patent: 5365092 (1994-11-01), Janesick
patent: 5688715 (1997-11-01), Sexton et al.
patent: 5814810 (1998-09-01), Anagnostopoulos
patent: 5825840 (1998-10-01), Anagnostopoulos
patent: 5891752 (1999-04-01), Losee
patent: 6587146 (2003-07-01), Guidash
patent: 6809008 (2004-10-01), Holm et al.
patent: 7498650 (2009-03-01), Lauxtermann
patent: 7588993 (2009-09-01), Liu et al.
patent: 2005/0118354 (2005-06-01), Ahn et al.
patent: 2005/0255625 (2005-11-01), Janesick et al.
patent: 2006/0006488 (2006-01-01), Kanbe
patent: 2006/0043437 (2006-03-01), Mouli
patent: 2006/0076590 (2006-04-01), Pain et al.
patent: 2006/0125038 (2006-06-01), Mabuchi
patent: 2006/0187327 (2006-08-01), Mabuchi et al.
patent: 2007/0012969 (2007-01-01), Mouli
patent: 2007/0117254 (2007-05-01), Pain
patent: 2007/0207566 (2007-09-01), Fu et al.
patent: 2007/0210395 (2007-09-01), Maruyama et al.
patent: 2007/0234949 (2007-10-01), Ahn et al.
patent: 2008/0001179 (2008-01-01), Roy
patent: 2008/0188021 (2008-08-01), Tsai et al.
patent: 2008/0308890 (2008-12-01), Uya
patent: 2009/0201395 (2009-08-01), Manabe et al.
patent: 2005/046207 (2005-05-01), None
Mark Clampin, V-Optical CCD's, http://www.stsci.edu/stsci/meetings/space—detectors/clampin.htm.
G. Agostinelli et al., “Very Low Surface Recombination Velocities on p-type Silicon Wafers Passivated with a Dielectric with Fixed Negative Charge”, Solar Enery Materials and Solar Cells, vol. 90, pp. 3438-3443 (2006).
Michael E. Hoenk et al., “Growth of a Delta-Doped Silicon Layer by Molecular Beam Epitaxy on a Charge-Coupled Device for Relection-Limited Ultraviolet Quantum Efficiency”, Appl. Phys. Lett., vol. 61, No. 9, pp. 1084-1086 (1992).
Shouleh Nikzad et al., “Delta-Doped CCD's for Enhanced UV Performance”, SPIE, vol. 2278, pp. 138-146 (1994).
M.P. Lesser, “Improving CCD Quantum Efficiency”, SPIE, vol. 2198, pp. 782-791 (1994).
Michael Lesser et al., “Enhancing Back Illuminated Performance of Astronomical CCD's”, SPIE, vol. 3355, pp. 446-456 (1998).
International Search Report and Written Opinion for International Patent Application No. PCT/US2009/061488 mailed Feb. 11, 2010.
Forbes Leonard
Haddad Homayoon
Hynecek Jaroslav
Joy Thomas
Kuo W. Wendy
McAndrews Held & Malloy Ltd.
Pert Evan
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