Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Junction field effect transistor
Patent
1995-12-22
1998-09-08
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Junction field effect transistor
257284, 257462, H01L 2980, H01L 310288, H01L 31112
Patent
active
058048472
ABSTRACT:
A photo FET device having a large area backside optical energy reception surface is disclosed. The photo FET device is fabricated in the source gate and drain upward configuration and then inverted onto a new permanent substrate member and an original surrogate substrate member removed in order to expose the active area backside optical energy reception surface. Electrical characteristics including curve tracer electrical data originating in both dark and illuminated devices and devices of varying size and both depletion mode and enhancement mode operation are also disclosed. Fabrication of the device from gallium arsenide semiconductor material and utilization for infrared energy transducing in a number of differing electronic applications are also disclosed.
REFERENCES:
patent: 3749987 (1973-07-01), Anantha
patent: 4198646 (1980-04-01), Alexander et al.
patent: 4321613 (1982-03-01), Hughes et al.
patent: 4523368 (1985-06-01), Feist
patent: 4624004 (1986-11-01), Calviello
patent: 4632710 (1986-12-01), Van Rees
patent: 4642883 (1987-02-01), Sakurai et al.
patent: 4677735 (1987-07-01), Malhi
patent: 4688062 (1987-08-01), Liles
patent: 4782375 (1988-11-01), Popiovic
patent: 4849376 (1989-07-01), Balzan et al.
patent: 4908325 (1990-03-01), Berenz
patent: 5008213 (1991-04-01), Kolesar, Jr.
patent: 5150182 (1992-09-01), Capps et al.
patent: 5373191 (1994-12-01), Usagawa et al.
d'Heurle et al., Field Effect Transistors Utilizing Schottky Barrier Principle, IBM Technical Disclosure Bulletin vol. 9 No. 10, pp. 1470-1471, Mar. 10, 1967.
Hollins Gerald B.
Kundert Thomas L.
Ngo Ngan V.
The United States of America as represented by the Secretary of
LandOfFree
Backside illuminated FET optical receiver with gallium arsenide does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Backside illuminated FET optical receiver with gallium arsenide , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Backside illuminated FET optical receiver with gallium arsenide will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1284137