Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-12-26
2006-12-26
Lebentritt, Michael (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S107000, C438S458000
Reexamination Certificate
active
07153768
ABSTRACT:
A transparent substrate has a micro electro-mechanical system (MEMS) on a first side of the substrate. An opaque layer is formed on a second side of the transparent substrate opposite the first side. The opaque layer comprises a first material that is removable by a MEMS release process. A second layer is formed on the opaque layer. The second layer comprises a second material that prevents contamination of a front end of line machine by the first material during a front end of line fabrication process.
REFERENCES:
patent: 6653200 (2003-11-01), Olsen
patent: 7057794 (2006-06-01), Wang et al.
patent: 2003/0054588 (2003-03-01), Patel et al.
Chang Yuh-Hwa
Chen Fei-Yuh
Chu Eugene
Ho David
Koffs Steven E.
Lebentritt Michael
Taiwan Semiconductor Manufacturing Co.
Ullah Elias
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