Backgated FinFET having different oxide thicknesses

Details Backgated FinFET having different oxide thicknesses Backgated FinFET having different oxide thicknesses

2007-03-06

2007-03-06

Sarkar, Asok Kumar (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE29264, C257SE29275

Reexamination Certificate

active

11365504

ABSTRACT:
A method of producing a backgated FinFET having different dielectric layer thickness on the front and back gate sides includes steps of introducing impurities into at least one side of a fin of a FinFET to enable formation of dielectric layers with different thicknesses. The impurity, which may be introduced by implantation, either enhances or retards dielectric formation.

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