Backend metallization method and device obtained therefrom

Details Backend metallization method and device obtained therefrom Backend metallization method and device obtained therefrom

2006-06-06

2006-06-06

Kang, Donghee (Department: 2811)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S624000, C438S626000, C438S118000, C257S773000, C257S774000

Reexamination Certificate

active

07056823

ABSTRACT:
A semiconductor device and a method of making it are described. During the formation of the semiconductor device, a hard mask is formed of an etch-resistant material. The mask prevents etchant from etching an area within a dielectric material near a conductive plug. The mask may be formed of a nitride. Conductive material is then deposited within an etched via and is contacted with the conductive plug.

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Peter Singer, “Dual-Damascene Challenges Dielectric Etch”, Semiconductor International, Aug. 1999, pp. 68-72.

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