Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration
Reexamination Certificate
2005-02-22
2005-02-22
Kang, Donghee (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified configuration
C257S635000, C257S637000, C257S640000, C257S758000, C257S773000, C438S618000, C438S629000
Reexamination Certificate
active
06858937
ABSTRACT:
A semiconductor device and a method of making it are described. During the formation of the semiconductor device, a hard mask is formed of an etch-resistant material. The mask prevents etchant from etching an area within a dielectric material near a conductive plug. The mask may be formed of a nitride. Conductive material is then deposited withinan etched via and is contacted with the conductive plug.
REFERENCES:
patent: 5097381 (1992-03-01), Vo
patent: 5122476 (1992-06-01), Fazan et al.
patent: 5598027 (1997-01-01), Matsuura
patent: 5739579 (1998-04-01), Chiang et al.
patent: 5880030 (1999-03-01), Fang et al.
patent: 6008117 (1999-12-01), Hong et al.
patent: 6097095 (2000-08-01), Chung
patent: 6150723 (2000-11-01), Harper et al.
patent: 6184128 (2001-02-01), Wang et al.
patent: 6294835 (2001-09-01), Dalal et al.
patent: 6303486 (2001-10-01), Park
Peter Singer, “Dual-Damascene Challenges Dielectric Etch”, Semiconductor International, Aug. 1999, pp. 68-72.
Dickstein , Shapiro, Morin & Oshinsky, LLP
Kang Donghee
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