Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-09-14
2009-08-11
Mandala, Victor A (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S173000, C257SE27016
Reexamination Certificate
active
07573103
ABSTRACT:
A device includes a memory device and an NPN or PNP diode coupled to a word-line of the memory device. The NPN diode includes a p-type substrate connected to ground, a well of n-type material formed in the p-type substrate in direct physical contact with the p-type substrate and electrically connected to the p-type substrate via a first metal line, a well of p-type material formed in the first well of n-type material, a first n-type region formed in the well of p-type material in direct physical contact with the well of p-type material and connected to the word line of the memory device, and a first p-type region formed in the well of n-type material in direct physical contact with the well of n-type material and electrically connected to the well of p-type material via a second metal line. The PNP diode includes a n-type substrate connected to ground, a well of p-type material formed in the n-type substrate in direct physical contact with the n-type substrate and electrically connected to the n-type substrate via a first metal line, a well of n-type material formed in the first well of p-type material, a first p-type region formed in the well of n-type material in direct physical contact with the well of n-type material and connected to the word line of the memory device, and a first n-type region formed in the well of p-type material in direct physical contact with the well of p-type material and electrically connected to the well of n-type material via a second metal line.
REFERENCES:
patent: 5422507 (1995-06-01), Wanlass
patent: 5900665 (1999-05-01), Tobita
patent: 5994741 (1999-11-01), Koizumi et al.
patent: 6407414 (2002-06-01), Yu
patent: 7112853 (2006-09-01), Li et al.
patent: 7274071 (2007-09-01), Ando et al.
patent: 7285827 (2007-10-01), He et al.
patent: 2005/0051847 (2005-03-01), Tsuji et al.
patent: 2005/0121725 (2005-06-01), Ando et al.
patent: 2005/0280091 (2005-12-01), Huang et al.
patent: 2006/0145263 (2006-07-01), Chou
U.S. Appl. No. 11/194,449, filed Aug. 2, 2005.
Ding Meng
He Yi
Liu Zhizheng
Zheng Wei
Harrity & Harrity LLP
Mandala Victor A
Spansion LLC
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