Back-to-back NPN/PNP protection diodes

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257SE27016

Reexamination Certificate

active

11194449

ABSTRACT:
A device includes a memory device and an NPN or PNP diode coupled to a word-line of the memory device. The NPN or PNP diode reduces device damage and performance impairment that may result from device charging by drawing charges away from the memory device.

REFERENCES:
patent: 5900665 (1999-05-01), Tobita
patent: 5994741 (1999-11-01), Koizumi et al.
patent: 2005/0121725 (2005-06-01), Ando et al.
patent: 2006/0145263 (2006-07-01), Chou

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Back-to-back NPN/PNP protection diodes does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Back-to-back NPN/PNP protection diodes, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Back-to-back NPN/PNP protection diodes will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3881732

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.