Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-10-23
2007-10-23
Chaudhari, Chandra (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE27016
Reexamination Certificate
active
11194449
ABSTRACT:
A device includes a memory device and an NPN or PNP diode coupled to a word-line of the memory device. The NPN or PNP diode reduces device damage and performance impairment that may result from device charging by drawing charges away from the memory device.
REFERENCES:
patent: 5900665 (1999-05-01), Tobita
patent: 5994741 (1999-11-01), Koizumi et al.
patent: 2005/0121725 (2005-06-01), Ando et al.
patent: 2006/0145263 (2006-07-01), Chou
Ding Meng
He Yi
Liu Zhizheng
Zheng Wei
Chaudhari Chandra
Farahani Dana
Harrity & Snyder L.L.P.
Spansion LLC
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