Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1996-02-21
1998-06-02
Tran, Minh-Loan
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257329, 257330, 257334, 257336, 257492, 257493, H01L 2976
Patent
active
057604401
ABSTRACT:
A back-source MOSFET uses a source electrode on a second surface of a substrate to reduce noise which would otherwise interfere with the logic circuit of a power integrated circuit. One embodiment includes a substrate of a first conductivity type and a base layer of a second conductivity type on a first surface of the substrate. A source region is electrically connected with the substrate. A source electrode is formed on a second surface of the substrate. A further embodiment includes a substrate of a first conductivity type and a base layer of a first conductivity type on a first surface of the substrate. A source electrode is formed on a second surface of the substrate.
REFERENCES:
patent: 5040045 (1991-08-01), McArthur et al.
patent: 5473176 (1995-12-01), Kakumoto
"MOSFET with a Low Resistance in ON State Realizing Power LSI", Electron Device and Semiconductor Power Conversion Joint Research Group of the Institute of Electrical Engineers of Japan, Oct. 29, 1992. (abs).
Daisuke Ueda et al., An Ultra-Low On-Resistance Power MOSFET Fabricated by Using a Fully Self-Aligned Process, IEEE Transactions on Electron Devices, vol. ED-34, No. 4, Apr. 1987.
H.R. Chang et al., Self-Aligned UMOSFET's with a Specific On-Resistance of 1 m.OMEGA. .multidot. cm.sup.2, IEEE Transactions on Electron Devices, vol. ED-34, No. 11, Nov. 1987.
Fujishima Naoto
Kitamura Akio
Fuji Electric & Co., Ltd.
Tran Minh-Loan
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