Back gated SRAM cell

Details Back gated SRAM cell Back gated SRAM cell

2011-05-31

2011-05-31

Elms, Richard (Department: 2824)

Static information storage and retrieval

Systems using particular element

Flip-flop

C365S171000, C365S173000

Reexamination Certificate

active

07952913

ABSTRACT:
One method for operating an SRAM cell includes applying a potential to a back gate of a pair of cross coupled p-type pull up transistors in the SRAM during a write operation. The method includes applying a ground to the back gate of the pair of cross coupled p-type pull up transistors during a read operation. The charge stored on a pair of cross coupled storage nodes of the SRAM is coupled to a front gate and a back gate of a pair of cross coupled n-type pull down transistors in the SRAM during the write operation and during a read operation.

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