Back-gated fully depleted SOI transistor

Details Back-gated fully depleted SOI transistor Back-gated fully depleted SOI transistor

2010-01-08

2011-10-04

Dang, Trung Q (Department: 2892)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S458000, C257SE21421

Reexamination Certificate

active

08030145

ABSTRACT:
A fully depleted semiconductor-on-insulator (FDSOI) transistor structure includes a back gate electrode having a limited thickness and aligned to a front gate electrode. The back gate electrode is formed in a first substrate by ion implantation of dopants through a first oxide cap layer. Global alignment markers are formed in the first substrate to enable alignment of the front gate electrode to the back gate electrode. The global alignment markers enable preparation of a virtually flat substrate on the first substrate so that the first substrate can be bonded to a second substrate in a reliable manner.

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