Back gate FET microwave switch

Details Back gate FET microwave switch Back gate FET microwave switch

1994-03-04

1995-10-17

Saadat, Mahshid D.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

257260, 257271, 257287, 257664, H01L 2978, H01L 2980

Patent

active

054593433

ABSTRACT:
A semiconductor device which includes a channel region of predetermined conductivity type having a pair of opposing surfaces (11 or 33) , a control element of opposite conductivity type disposed on one of the opposing surfaces (13 or 31) and a pair of spaced apart electrodes (17, 19 or 35, 37) disposed over the other of the opposing surfaces. The control element and channel region form a pn junction therebetween. An electrically insulating layer (15) can be disposed between the spaced apart electrodes (17, 19) and the channel region (11) in a high frequency embodiment.

REFERENCES:
patent: 4737837 (1988-04-01), Lee
patent: 4814836 (1989-03-01), Thompson
patent: 4914491 (1990-04-01), Vu
patent: 4916090 (1990-04-01), Motai et al.
patent: 4921814 (1990-05-01), Ishikawa et al.
patent: 4977434 (1990-12-01), Delagebeaudeuf et al.
patent: 5140391 (1992-08-01), Hayashi et al.
Liechti, "Microwave Field-Effect Transistors--1976", IEEE Transactions on Microwave Theory and Techniques, vol. MTT-24, No. 6, Jun. 1976, pp. 279-299.

Affiliated with

Also associated with

Rating

Back gate FET microwave switch does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Back gate FET microwave switch, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Back gate FET microwave switch will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-599549