Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – With extended latchup current level
Patent
1995-03-17
1997-07-01
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
With extended latchup current level
257142, 257143, 257144, 257149, H01L 2974, H01L 31111
Patent
active
056441495
ABSTRACT:
A thyristor according to the invention comprises a layer sequence containing an n-type emitter layer (4), a p-type base layer (5), an n-type base layer (6) and a p-type emitter layer (7) in a semiconductor substrate (3) between an anode (1) and a cathode (2). The p-type emitter layer (7) is perforated by anode short-circuit zones (8) and is thereby subdivided into sections. In this arrangement, the anode short circuits (8) short-circuit the n-type base layer (6) to the anode (1). Disposed between the anode short circuits (8) and the p-type emitter layer (7) is a p-type barrier layer (9), also referred to as p-type soft layer. According to the invention, said p-type barrier layer (9) has gaps (12) in which the n-type base (6) is contacted by the anode (1) either directly or via an anode short circuit (8).
REFERENCES:
patent: 4742382 (1988-05-01), Jaecklin
patent: 5491351 (1996-02-01), Bauer et al.
Tsunedo, Ogura, et al.: 6000-V Gate Turn-Off Thyristors (GTO's) with n-Buffer and New Anode Short Structure. In: IEEE Transactions on Electron Devices, vol. 38, No. 6, Jun., 1991, pp. 1491-1496.
Mitsuru, Kekura, et al.: 8000-V 1000-A Gate Turn-Off Thyristor with Low On-State Voltage and Lo Switching Loss. In: IEEE Transactions on Power Electronics, vol. 5, No. 4, Oct., 1990, pp. 430-435.
Abraham Fetsum
Asea Brown Boveri AG
Crane Sara W.
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