Back bias voltage generator circuit of a semiconductor memory de

Static information storage and retrieval – Read/write circuit – Including reference or bias voltage generator

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Details

365226, 327535, 327536, H03K 301

Patent

active

054348200

ABSTRACT:
A Vbb generator having several distributed Vbb generators, which are located respectively adjacent to memory array blocks is disclosed. The distributed Vbb generator is activated during the time when a memory block located adjacent the Vbb generator is accessed for write/read operations. The back bias voltage generator circuit has a first Vbb generator and a second Vbb generator for supplying a back bias voltage to the substrate. The second Vbb generator comprises an oscillator for generating a clock pulse and a plurality of distributed Vbb generators. The distributed Vbb generators include an auxiliary pumping portion including a buffer portion for buffering the clock pulse from the oscillator, a pumping capacitor connected to the output of the buffer portion for pumping a back bias voltage, and a rectifying portion connected to the pumping capacitor for supplying the back bias voltage to the substrate, and a switch for connecting the clock pulse from the oscillator to the auxiliary pumping portion, the clock pulse activating a pumping operation of the auxiliary pumping portion.

REFERENCES:
patent: 4964082 (1990-10-01), Sato et al.
patent: 5022005 (1991-06-01), Tohnishi
patent: 5043597 (1991-08-01), Furuyama et al.

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