Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-05-24
2005-05-24
Zarabian, Amir (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S303000, C257S306000
Reexamination Certificate
active
06897501
ABSTRACT:
A capacitor structure having a capacitor with a top electrode, a bottom electrode, and a capacitor dielectric layer between the top and bottom electrodes is disclosed. The capacitor includes upper and lower portions. The demarcation between the upper and lower portion is located between top and bottom surfaces of the capacitor dielectric layer. A dielectric layer is provided on the sidewalls of the upper portion of the capacitor to prevent shorting between the electrodes that can be caused by a conductive fence formed during processing.
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Beitel Gerhard
Egger Ulrich
Hornik Karl
Lian Jingyu
Zhuang Haoren
Horizon IP Pte Ltd
Infineon Technologies Aktiengesellschaft
Soward Ida M.
Zarabian Amir
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