Avalanche fuse element with isolated emitter

Details Avalanche fuse element with isolated emitter Avalanche fuse element with isolated emitter

1982-03-23

1985-01-01

James, Andrew J.

357 35, 357 51, 357 53, H01L 2970, H01L 2986, H01L 2978

Patent

active

044918577

ABSTRACT:
A programmable device is provided by a thin-oxide avalanche fuse element which is programmed at a voltage below the oxide breakdown level. This device may be used to fix the addresses of faulty rows or columns in a memory having redundant or substitute cells. Upon breakdown, the thin oxide is perforated by small holes which fill with silicon to create short circuits. The source or emitter of the transistor device may be separated from the drain and gate by thick field oxide.

REFERENCES:
patent: 4350992 (1982-09-01), Tubbs
patent: 4399523 (1983-08-01), Gerber et al.
"Electrically Alterable Avalanche-Injection-Type, MOS Read Only Memory, with Stacked Gate Structure"--Iizuka et al.,--IEEE Transactions on Electron Devices--vol. ED-23-4-1976--pp. 379-387.
1024-Bit MNOS RAM Using Avalanche Tunnel Injection, Uchida et al.--IEE Journal of Solid State Circuits--vol. SC10 No. 5, pp. 288-293, Oct. 1975.

Affiliated with

Also associated with

Rating

Avalanche fuse element with isolated emitter does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Avalanche fuse element with isolated emitter, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Avalanche fuse element with isolated emitter will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-579819