Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Reexamination Certificate
2006-04-27
2009-02-24
Vinh, Lan (Department: 1792)
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
C438S693000, C438S694000, C438S017000
Reexamination Certificate
active
07494929
ABSTRACT:
Methods and apparatus for automatic gain control. A film on a substrate is polished by a chemical mechanical polisher that includes a polishing pad and an in-situ monitoring system. The polishing pad includes a first portion, and the in-situ monitoring system includes a light source and a light detector. The light source emits light, and light emitted from the light source is directed through the first portion and to a surface of the film being polished. Light reflecting from the surface of the film being polished and passing through the first portion is received at the light detector. An electronic signal is generated based on the light received at the light detector. When the electronic signal is evaluated not to satisfy one or more constraints, a gain for the light detector is adjusted so that the electronic signal would satisfy the one or more constraints.
REFERENCES:
patent: 6511363 (2003-01-01), Yamane et al.
patent: 2004/0011462 (2004-01-01), Gotkis et al.
patent: 2005/0194971 (2005-09-01), Lehman et al.
Bennett Doyle E.
Swedek Boguslaw A.
Applied Materials Inc.
Fish & Richardson
Vinh Lan
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