Automatic control method for growing single-crystal neck portion

Details Automatic control method for growing single-crystal neck portion Automatic control method for growing single-crystal neck portion

1992-02-12

1994-02-22

Kunemund, Robert

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

1566171, 422249, C30B 1522

Patent

active

052883639

ABSTRACT:
The method automatically controls the growing of a single-crystal neck portion by the CZ method. The speed of pulling up the crystal is adjusted so that the crystal diameter control deviation becomes closer to zero. Combinations of the crystal diameter control deviation .DELTA.D being large or small and the pulling-up speed V being high or low are employed as fuzzy inference conditions. According to such conditions, a correction value for the power supplied to a melt heater 18 is calculated, based on the fuzzy inference.

REFERENCES:
patent: 3692499 (1972-09-01), Andrychuk
patent: 3958129 (1976-05-01), Clement
patent: 4207293 (1980-06-01), Scholl et al.
patent: 4617173 (1986-10-01), Latka
patent: 4926357 (1990-05-01), Katsuoka et al.
patent: 5089238 (1992-02-01), Araki et al.
Patent Abstracts of Japan vol. 10, No. 23 (C-325) Jan. 29, 1986 & JP-A-60 176 989 (Toshiba K.K.) Sep. 11, 1985 *abstract*.
Patent Abstracts of Japan vol. 14, No. 505 (C-775) Nov. 5, 1990 & JP-A-2 208 280 (NEC Corp) Aug. 17, 1990 *abstract*.

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