Static information storage and retrieval – Floating gate – Particular biasing
Patent
1995-09-11
1997-06-24
Nguyen, Viet Q.
Static information storage and retrieval
Floating gate
Particular biasing
3651852, 36518907, 36518909, G11C 700, G11C 1604
Patent
active
056423098
ABSTRACT:
An auto-program voltage generator in a nonvolatile semiconductor memory having a plurality of floating gate type memory cells, program circuit for programming selected memory cells, and program verification circuit for verifying whether or not the selected memory cells are successfully programmed comprises a high voltage generator for generating a program voltage, a trimming circuit for detecting the level of the program voltage to increase sequentially the program voltage within a predetermined voltage range every time the selected memory cells are not successfully programmed, a comparing circuit for comparing the detected voltage level with a reference voltage and then generating a comparing signal, and a high voltage generation control circuit for activating the high voltage generator in response to the comparing signal.
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patent: 5428569 (1995-06-01), Kato et al.
patent: 5434825 (1995-07-01), Harari
patent: 5450341 (1995-09-01), Sawada et al.
Kim Jin-Ki
Lee Sung-Soo
Lim Hyung-Kyu
Nguyen Viet Q.
Samsung Electronics Co,. Ltd.
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