Attenuating type phase shifting mask, method of manufacturing th

Details Attenuating type phase shifting mask, method of manufacturing th Attenuating type phase shifting mask, method of manufacturing th

1995-06-05

1997-01-14

Rosasco, S.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

430 31, 430322, 430394, G03F 900

Patent

active

055938019

ABSTRACT:
An attenuating type phase shifting mask and semiconductor device manufactured by using the mask according to the present invention includes an attenuating type phase shifting pattern, and an attenuating type auxiliary phase shifting pattern having a transmitting portion and a phase shifter portion formed at a predetermined position at the periphery of attenuating type phase shifting pattern, wherein attenuating type auxiliary phase shifting pattern includes a pattern having a resolution smaller than a limit of resolution of an exposure apparatus. Whereby, exposure of the region around a normal exposure region is prevented, and also exposure of the region adjacent to the exposure region is prevented when conducting exposure successively with a substrate moved.

REFERENCES:
patent: 4902899 (1990-02-01), Lin et al.
patent: 5288569 (1994-02-01), Lin

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