Attenuated phase shift mask and method of manufacture thereof

Details Attenuated phase shift mask and method of manufacture thereof Attenuated phase shift mask and method of manufacture thereof

1996-07-17

1997-09-16

Rosasco, S.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

430322, 430311, 428203, G03F 900

Patent

active

056679190

ABSTRACT:
An attenuated Phase Shift Mask (PSM) blank and an attenuated Phase Shift Mask (PSM), and a method by which the attenuated Phase Shift Mask (PSM) blank and the attenuated Phase Shift Mask (PSM) may be formed. To form the attenuated Phase Shift Mask (PSM) blank there is first provided a transparent substrate. Formed upon the transparent substrate is a tantalum-silicon oxide blanket semi-transparent shifter layer which has the formula,

REFERENCES:
patent: 5045417 (1991-09-01), Okamoto
patent: 5538816 (1996-07-01), Hashimoto et al.
patent: 5614335 (1997-03-01), Hashimoto et al.
P. Burggraaf, "Lithography's Leading Edge, Part I, Phase-Shift Technology" Semiconductor International, Feb. 1992, pp. 44-45.

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