Attenuated embedded phase shift photomask blanks

Details Attenuated embedded phase shift photomask blanks Attenuated embedded phase shift photomask blanks

2005-02-22

2005-02-22

Mohamedulla, Saleha R. (Department: 1756)

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

Reexamination Certificate

active

06858357

ABSTRACT:
An attenuating embedded phase shift photomask blank that produces a phase shift of the transmitted light is formed with an optically translucent film made of metal, silicon, nitrogen or metal, silicon, nitrogen and oxygen. A wide range of optical transmission (0.001% up to 20% at 193 nm) is obtained by this process. A post deposition process is implemented to obtain the desired properties (stability of optical properties with respect to laser irradiation and acid treatment) for use in industry. A special fabrication process for the sputter target is implemented to lower the defects of the film.

REFERENCES:
patent: 5952128 (1999-09-01), Isao et al.
patent: 5955223 (1999-09-01), Mitsui et al.
patent: 6335124 (2002-01-01), Mitsui et al.

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