Atomic layer removal process with higher etch amount

Details Atomic layer removal process with higher etch amount Atomic layer removal process with higher etch amount

2008-12-23

2011-11-15

Tran, Binh X (Department: 1713)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C156S345260

Reexamination Certificate

active

08058179

ABSTRACT:
Higher overall etch rate and throughput for atomic layer removal (ALR) is achieved. The reaction is a self-limiting process, thus limiting the total amount of material that may be etched per cycle. By pumping down the process station between reacting operations, the reaction is partially “reset.” A higher overall etch rate is achieved by a multiple exposure with pump down ALR process.

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