Atomic layer profiling of diffusion barrier and metal seed...

Details Atomic layer profiling of diffusion barrier and metal seed... Atomic layer profiling of diffusion barrier and metal seed...

2007-05-24

2010-11-30

Coleman, W. David (Department: 2813)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S628000, C257SE21582

Reexamination Certificate

active

07842605

ABSTRACT:
Material is removed from a substrate surface (e.g., from a bottom portion of a recessed feature on a partially fabricated semiconductor substrate) by subjecting the surface to a plurality of profiling cycles, wherein each profiling cycle includes a net etching operation and a net depositing operation. An etching operation removes a greater amount of material than is being deposited by a depositing operation, thereby resulting in a net material etch-back per profiling cycle. About 2-10 profiling cycles are performed. The profiling cycles are used for removing metal-containing materials, such as diffusion barrier materials, copper line materials, and metal seed materials by PVD deposition and resputter. Profiling with a plurality of cycles removes metal-containing materials without causing microtrenching in an exposed dielectric. Further, overhang is reduced at the openings of the recessed features and sidewall material coverage is improved. Integrated circuit devices having higher reliability are fabricated.

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