Coating apparatus – Gas or vapor deposition
Reexamination Certificate
2006-08-08
2006-08-08
Lund, Jeffrie R. (Department: 1763)
Coating apparatus
Gas or vapor deposition
C118S620000, C118S665000, C118S666000, C118S692000, C118S712000, C118S713000, C118S722000, C118S724000, C118S725000, C156S345250, C156S345260, C156S345270, C156S345290, C156S345330, C156S345500, C156S345510, C156S345520, C156S345530, C156S345540
Reexamination Certificate
active
07087119
ABSTRACT:
An apparatus for atomic layer deposition preventing mixing of a precursor gas and an input gas. From the apparatus a flow of the input gas is provided over a surface of the workpiece wherein a beam of the electromagnetic radiation is directed into the input gas in close proximity to the surface of the workpiece, but spaced a finite distance therefrom. The input gas is dissociated by the beam producing a high flux point of use generated reactive gas species that reacts with a surface reactant formed on the surface of the workpiece by a direct flow of the precursor gas flown from the dispensing unit. The surface reactant and reactive gas species react to form a desired monolayer of a material on the surface of the workpiece.
REFERENCES:
patent: 4176024 (1979-11-01), Garbuny
patent: 4260649 (1981-04-01), Dension et al.
patent: 4522674 (1985-06-01), Ninomiya et al.
patent: 4734152 (1988-03-01), Geis et al.
patent: 4774416 (1988-09-01), Askary et al.
patent: 4924807 (1990-05-01), Nakayama et al.
patent: 4975252 (1990-12-01), Nishizawa et al.
patent: 5023424 (1991-06-01), Vaught
patent: 5114834 (1992-05-01), Nachshon
patent: 5174826 (1992-12-01), Mannava et al.
patent: 5270247 (1993-12-01), Sakuma et al.
patent: 5290383 (1994-03-01), Koshimizu
patent: 5540783 (1996-07-01), Eres et al.
patent: 5607601 (1997-03-01), Loper et al.
patent: 5637188 (1997-06-01), Amme et al.
patent: 5659383 (1997-08-01), Ozawa
patent: 5669979 (1997-09-01), Elliott et al.
patent: 5772771 (1998-06-01), Li et al.
patent: 5814156 (1998-09-01), Elliott et al.
patent: 6136719 (2000-10-01), Miller et al.
patent: 6200389 (2001-03-01), Miller et al.
patent: 6203865 (2001-03-01), Badzian et al.
patent: 6334901 (2002-01-01), Nishizawa et al.
patent: 6416823 (2002-07-01), Li et al.
patent: 6448192 (2002-09-01), Kaushik
patent: 6461436 (2002-10-01), Campbell et al.
patent: 6461909 (2002-10-01), Marsh et al.
patent: 6503330 (2003-01-01), Sneh et al.
patent: 6509601 (2003-01-01), Lee et al.
patent: 6573199 (2003-06-01), Sandhu et al.
patent: 6634314 (2003-10-01), Hwang et al.
patent: 6730367 (2004-05-01), Sandhu
patent: 6793736 (2004-09-01), Sandhu et al.
patent: 6821563 (2004-11-01), Yudovsky
patent: 2002/0031846 (2002-03-01), Natori
patent: 2003/0102008 (2003-06-01), Sandhu et al.
patent: 2003/0170389 (2003-09-01), Sandhu
patent: 2004/0058293 (2004-03-01), Nguyen et al.
patent: 2004/0083951 (2004-05-01), Sandhu
patent: 2004/0129212 (2004-07-01), Gadgil et al.
patent: 2004/0185184 (2004-09-01), Sandhu
Vinay Prasad, Matthias K. Gobbert, and Timothy S. Cale, Prediction of Deposition Rates in Atomic Layer Deposition, Focus Center—New York, Rensselaer: Interconnections for Gigascale Integration, Rensselaer Polytechnic Institute, Troy, NY, Department of Mathematics and.
Dinsmore & Shohl LLP
Lund Jeffrie R.
LandOfFree
Atomic layer deposition with point of use generated reactive... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Atomic layer deposition with point of use generated reactive..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Atomic layer deposition with point of use generated reactive... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3661158