Atomic layer deposition using electron bombardment

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Reexamination Certificate

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C117S094000, C117S095000, C117S105000

Reexamination Certificate

active

07628855

ABSTRACT:
Formation of a layer of material on a surface by atomic layer deposition methods and systems includes using electron bombardment of the chemisorbed precursor.

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