Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Reexamination Certificate
2007-02-09
2009-12-08
Kunemund, Robert M (Department: 1792)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
C117S094000, C117S095000, C117S105000
Reexamination Certificate
active
07628855
ABSTRACT:
Formation of a layer of material on a surface by atomic layer deposition methods and systems includes using electron bombardment of the chemisorbed precursor.
REFERENCES:
patent: 5042011 (1991-08-01), Casper et al.
patent: 5256244 (1993-10-01), Ackerman
patent: 5280205 (1994-01-01), Green et al.
patent: 5307311 (1994-04-01), Silwa
patent: 5627785 (1997-05-01), Gilliam et al.
patent: 5903098 (1999-05-01), Jones
patent: 5916365 (1999-06-01), Sherman
patent: 6174377 (2001-01-01), Doering et al.
patent: 6436615 (2002-08-01), Brandow et al.
patent: 6482740 (2002-11-01), Soininen et al.
patent: 6630201 (2003-10-01), Chiang et al.
patent: 6951827 (2005-10-01), Utz et al.
patent: 7189287 (2007-03-01), Rueger
patent: 2003/0200917 (2003-10-01), Vaartstra
patent: 2004/0036129 (2004-02-01), Forbes et al.
patent: 2004/0124348 (2004-07-01), Utz et al.
patent: WO 00/79019 (2000-06-01), None
patent: WO 2004/019394 (2004-03-01), None
Kunemund Robert M
Micro)n Technology, Inc.
Mueting Raasch & Gebhardt, P.A.
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