Coating processes – Coating by vapor – gas – or smoke
Reexamination Certificate
2006-08-01
2010-06-15
Meeks, Timothy H (Department: 1792)
Coating processes
Coating by vapor, gas, or smoke
C556S042000, C556S043000
Reexamination Certificate
active
07736697
ABSTRACT:
Atomic layer deposition processes for the formation of tantalum-containing films on surfaces are provided. Also provided are novel tantalum complexes that can be used as tantalum precursors in the disclosed deposition processes.
REFERENCES:
patent: 6511936 (2003-01-01), Theopold et al.
patent: 6527848 (2003-03-01), Hintermaier et al.
patent: 2003/0143839 (2003-07-01), Raaijmakers et al.
patent: 2004/0187304 (2004-09-01), Chen et al.
patent: 2004/0219369 (2004-11-01), Garg et al.
patent: 2005/0059240 (2005-03-01), Choi et al.
patent: 2007/0003689 (2007-01-01), Kato et al.
patent: WO 03/102265 (2003-12-01), None
M. Ritala et. al., Atomic Layer Deposition in Handbook of Thin Film Materials, 2001, vol. 1, Chapter 2, Academic Press.
Kim et al., “Plasma-enhanced atomic layer deposition of tantalum thin films: the growth and film properties”, Preparation and Characterization, Elsevier Netherlands, vol. 441, No. 1-2, 2003, pp. 311-316 .
Lemonds, et al., “Surface science investigations of atomic layer deposition half-reactions using TaF5 and Si2H6”, Surface Science Elsevier Netherlands, vol. 538, No. 3, 2003, pp. 191-203.
Lehn et al., “A new precursor for the chemical vapor deposition of tantalum nitride films”, J. Mater. Chem., Journal of Materials Chemistry, vol. 14, No. 21, 2004, pp. 3239-3245.
Lim et al., “A study on the development of chemical vapor deposition precursors. 4. Syntheses and characterization of new n-alkoxo-[beta]-ketoiminate complexes of niobium and tantalum”, Chemistry of Materials, American Chem. Soc., vol. 14, No. 4, 2002, pp. 1548-1554.
Guerin et al., “Conformationally Rigid Diamide Complexes: Synthesis and Structure of Tantalum (III) Alkyne Derivatives”, Organometallics, vol. 14, 1995, pp. 3154-3156.
Oshiki et al., “Catalytic performance of tantalum-eta<2>-alkyne complexes [TaC13 (R<1>C equiv. CR<2>L2] for alkyne cyclotrimerization”, Bulletin of the Chemical Society of Japan, vol. 77, No. 5, 2004, pp. 1009-1011.
Franceschini et al., “Volatile Beta-Ketoiminato- and Beta-Diketiminato-Based Zirconium Complexes as Potential MOCVD Precursors” Inorganic Chemistry, Americam Chemical Society, vol. 42, No. 22, 2003, pp. 7273-7282.
PCT International Search Report and Written Opinion for International Application No. PCT/US2006/030711 dated Jan. 3, 2007.
Radzewich Catherine E.
Thompson Jeffery Scott
E. I. du Pont de Nemours and Company
Meeks Timothy H
Miller, Jr. Joseph
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