Atomic layer deposition of copper using surface-activation...

Coating processes – Coating by vapor – gas – or smoke

Reexamination Certificate

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C427S301000, C427S252000

Reexamination Certificate

active

07604840

ABSTRACT:
The present invention relates to a novel atomic layer deposition process for the formation of copper films on substrates or in or on porous solids in an atomic layer deposition process.

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patent: WO 03/095701 (2003-11-01), None
M. Ritala et. al., Atomic Layer Deposition, Handbook of Thin Film Materials, 2001, vol. 1, Chapter 2, Academic Press (Book not Included).
P.M. Jeffries et. al., Metal-Organic Chemical Vapor Deposition of Copper and Copper (I) Oxide From Copper (I) Tert Butoxide, Chem. Mater., 1992, vol. 4:1169-1175.
Tobias Torndahl et. al., Growth of Copper Metal by Atomic Layer Deposition Using Copper (I) Chloride, Water and Hydrogen as Precursors, Thin Solid Films, 2004, vol. 458:129-136.
International Search Report Dated Mar. 27, 2006, International Application No. PCT/US2005/029439, International Filing Date: Aug. 16, 2005.

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