Coating processes – Coating by vapor – gas – or smoke – Mixture of vapors or gases utilized
Reexamination Certificate
2003-12-09
2008-10-07
Meeks, Timothy (Department: 1792)
Coating processes
Coating by vapor, gas, or smoke
Mixture of vapors or gases utilized
C427S569000, C427S126300, C427S255310, C427S255320, C427S255340, C427S255370
Reexamination Certificate
active
07431966
ABSTRACT:
The invention includes atomic layer deposition methods of depositing an oxide on a substrate. In one implementation, a substrate is positioned within a deposition chamber. A first species is chemisorbed onto the substrate to form a first species monolayer within the deposition chamber from a gaseous precursor. The chemisorbed first species is contacted with remote plasma oxygen derived at least in part from at least one of O2and O3and with remote plasma nitrogen effective to react with the first species to form a monolayer comprising an oxide of a component of the first species monolayer. The chemisorbing and the contacting with remote plasma oxygen and with remote plasma nitrogen are successively repeated effective to form porous oxide on the substrate. Other aspects and implementations are contemplated.
REFERENCES:
patent: 4652463 (1987-03-01), Peters
patent: 6960537 (2005-11-01), Shero et al.
patent: 2001/0041250 (2001-11-01), Werkhoven et al.
patent: 2003/0143319 (2003-07-01), Park et al.
patent: 2006/0009044 (2006-01-01), Igeta et al.
patent: 2006/0174833 (2006-08-01), Yamazaki et al.
Derderian Garo J.
Dynka Danny
Meng Shuang
Meeks Timothy
Micro)n Technology, Inc.
Stouffer Kelly M
Wells St. John P.S.
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