Atomic layer deposition method

Coating processes – Coating by vapor – gas – or smoke

Reexamination Certificate

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C427S255500, C427S569000

Reexamination Certificate

active

06872421

ABSTRACT:
An apparatus and method for performing atomic layer deposition. A plurality of substrates are loaded into a plurality of reaction cells. The reaction cells are disposed in a reaction chamber isolated from an exterior condition. Various paper substances are ultimately and repeatedly applied onto each substrate such that a thin film is formed on each substrate. The plurality of vapor injection pipes each inject one of the vapor substances by periodically scanning over each substrate to apply substance.

REFERENCES:
patent: 3696779 (1972-10-01), Murai et al.
patent: 3783822 (1974-01-01), Wollman
patent: 4058430 (1977-11-01), Suntola et al.
patent: 5062386 (1991-11-01), Christensen
patent: 5281274 (1994-01-01), Yoder
patent: 5302209 (1994-04-01), Maeda et al.
patent: 5314538 (1994-05-01), Maeda et al.
patent: 5338362 (1994-08-01), Imahashi
patent: 5702532 (1997-12-01), Wen et al.
patent: 5730802 (1998-03-01), Ishizumi et al.
patent: 5879459 (1999-03-01), Gadgil et al.
patent: 6042652 (2000-03-01), Hyun et al.
patent: 6174377 (2001-01-01), Doering et al.
patent: 6391803 (2002-05-01), Kim et al.
patent: 6528430 (2003-03-01), Kwan et al.
patent: 20020043216 (2002-04-01), Hwang et al.
patent: 20030044533 (2003-03-01), Lee

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