Coating processes – Coating by vapor – gas – or smoke
Reexamination Certificate
2011-04-05
2011-04-05
Meeks, Timothy H (Department: 1715)
Coating processes
Coating by vapor, gas, or smoke
C427S595000, C427S596000
Reexamination Certificate
active
07919142
ABSTRACT:
Disclosed are an atomic layer deposition apparatus using a neutral beam and a method of depositing an atomic layer using the apparatus, capable of converting an ion beam into a neutral beam and radiating it onto a substrate to be treated. The method uses an apparatus for supplying a first reaction gas containing a material that cannot be chemisorbed onto a substrate to be treated into a reaction chamber in which the substrate is loaded, and forming a first reactant adsorption layer containing a material that cannot be chemisorbed onto the substrate; and radiating a neutral beam generated by the second reaction gas onto the substrate on which the first reactant adsorption layer is formed, and removing a material not chemisorbed onto the substrate from the first reactant adsorption layer to form a second reactant adsorption layer. It is possible to perform a process without damage due to charging with the apparatus for depositing an atomic layer using a neutral beam and the method of depositing an atomic layer using the apparatus.
REFERENCES:
patent: 62-291032 (1987-12-01), None
patent: 2003-092291 (2003-03-01), None
Grigoriev et al., Broad fast neutral molecule beam sources for industrial-scale beam-assisted depostion, Surface Coatings and Technology, 156 (2002) pp. 44-49.
Goeckner et al., “Reduction of Residual Charge in Surface-Neutralization Beams,” 2ndInternational Symposium on Plasma Process-Induced Damage, May 13-14, 1997, 5 Sheets.
Oakes et al., “Selective, Anisotropic and Damage-Free SIO2Etching with a Hyperthermal Atomic Beam,” Physical Sciences, Inc., Plasma Etch Users Group Conference, Jan. 2000, 8 Sheets.
Yunogami et al., “Development of Neutral-Beam-Assisted Etcher,” Central Research Laboratory, J. Vac. Sci. Technol., vol. 13, No. 3, American Vacuum Society, May\Jun. 1995, pp. 952-958.
Ahn Kyeong-Joon
Lee Do-Haing
Park Byoung-Jae
Yeom Geun-Young
Foley & Lardner LLP
Gambetta Kelly M
Meeks Timothy H
Sungkyunkwan University Foundation for Corporate Collaboration
LandOfFree
Atomic layer deposition apparatus using neutral beam and... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Atomic layer deposition apparatus using neutral beam and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Atomic layer deposition apparatus using neutral beam and... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2732968