Atomic layer deposited tantalum containing adhesion layer

Details Atomic layer deposited tantalum containing adhesion layer Atomic layer deposited tantalum containing adhesion layer

2004-06-30

2009-10-20

Wilczewski, M. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S761000, C257SE23145, C257SE23155

Reexamination Certificate

active

07605469

ABSTRACT:
Apparatus and methods of fabricating an atomic layer deposited tantalum containing adhesion layer within at least one dielectric material in the formation of a metal, wherein the atomic layer deposition tantalum containing adhesion layer is sufficiently thin to minimize contact resistance and maximize the total cross-sectional area of metal, including but not limited to tungsten, within the contact.

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Jin-Seong Park et al., “Plasma-Enhanced Atomic Layer Deposition of Ta-N Thin Films”,Journal of the Electrochemical Society,vol. 149, No. 1, 2002, pp. C28-C32.

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