Atomic layer controlled optical filter design for next...

Details Atomic layer controlled optical filter design for next... Atomic layer controlled optical filter design for next...

2005-08-16

2005-08-16

Dunn, Drew A. (Department: 2872)

Optical: systems and elements

Light interference

Produced by coating or lamina

C359S580000, C359S577000

Reexamination Certificate

active

06930835

ABSTRACT:
An optical filter using alternating layers of materials with “low” and “high” indices of refraction and deposited with atomic layer control has been developed. The multilayered thin film filter uses, but is not limited to, alternating amorphous layers of atomically controlled Si (n=3.56) as the high index material and diamond-like carbon (DLC, n=2.0) as the low index material. The Si layers are grown with a self-limiting pulsed molecular beam deposition process which results in layer-by-layer growth and thickness control to within one atomic layer. The DLC layers are produced using an ion-based process and made atomically smooth using a modified Chemical Reactive-Ion Surface Planarization (CRISP) process. Intrinsic stress is monitored using an in-situ cantilever-based intrinsic stress optical monitor and adjusted during filter fabrication by deposition parameter modification. The resulting filter has sufficient individual layer thickness control and surface roughness to enable ˜12.5 GHz filters for next generation multiplexers and demultiplexers with more than 1000 channels in the wavelength range 1.31-1.62 μm.

REFERENCES:
patent: 4747922 (1988-05-01), Sharp
patent: 4987007 (1991-01-01), Wagal et al.
patent: 5377045 (1994-12-01), Wolfe et al.
patent: 5529671 (1996-06-01), Debley et al.
patent: 5725413 (1998-03-01), Malshe et al.
patent: 5748350 (1998-05-01), Pan et al.
patent: 6205270 (2001-03-01), Cao
patent: 6233261 (2001-05-01), Mesh et al.
patent: 6545809 (2003-04-01), Phillips
Kumar, et al.;Near-Infrared Bandpass Filter from Si/SiO2; Multilayer Coatings; Feb. 1999.
Suntola, T.;Cost-Effective Processing by Atomic Layer Epitaxy;.1993.
Bachman, et al.;Molecular Layer Epitaxy by Real-Time Optical Process Monitoring; Department of Materials Science and Engineering, North Carolina State University, 1997.
H., Kawai, T. Tabata;Atomic Layer Control of the Growth of Oxide Superconductors Using Laser Molecular Beam Epitaxy; 1997.
Spiller, E;Smoothing of Multilayer X-Ray Mirrors by Ion Polishing; IBM Research Division, Thomas J. Watson; 1993.
Puik, E.J, van der Wiel and Zeijlemaker, H, and Verhoeven, J.;Ion Etching of Thin W Layers: Enhancing Reflectivity of W-C Multilayer Coatings; Mar. 30, 1989.
Nishizawa, J., Abe, H., and Kurabayashi, T.J . 132(5) (1985).
Puik, E.J., et al.;Appln. Surf. Sci. 47(1991) 251.
Kloidt, A, et al.;Thin Sol Films, 228(1993) 154.
Imai, F., Kunimori, K., and Nozoye, H;Novel Epitaxial Growth Mechanism of Magnesium Oxide/Titanium Oxide Ceramics Superlattice Thin Films Observed by Reflection High-Energy Electron Diffraction; Nov. 8, 1993.
Kildemo, et al.;Real Time Control of the Growth of Silicon Alloy Mulitlayers by Multiwavelength Ellipsometry; 1996.

Affiliated with

Also associated with

Rating

Atomic layer controlled optical filter design for next... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Atomic layer controlled optical filter design for next..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Atomic layer controlled optical filter design for next... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3459923