Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Fluid growth from gaseous state combined with subsequent...
Reexamination Certificate
2005-02-22
2005-02-22
Sarkar, Asok Kumar (Department: 2829)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
Fluid growth from gaseous state combined with subsequent...
C438S029000, C438S962000
Reexamination Certificate
active
06858519
ABSTRACT:
Atomic hydrogen flux impinging on the surface of a growing layer of III-V compounds during VCSEL processing can prevent three-dimensional growth and related misfit dislocations. Use of hydrogen during semiconductor processing can allow, for example, more indium in InGaAs quantum wells grown on GaAs. Atomic hydrogen use can also promote good quality growth at lower temperatures, which makes nitrogen incorporated in a non-segregated fashion producing better material. Quantum wells and associated barriers layers can be grown to include nitrogen (N), aluminum (Al), antimony (Sb), and/or indium (In) placed within or about a typical GaAs substrate to achieve long wavelength VCSEL performance, e.g., within the 1260 to 1650 nm range.
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Finisar Corporation
Sarkar Asok Kumar
Workman Nydegger
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