Atomic force microscope cantilever including field effect...

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Physical stress responsive

Reexamination Certificate

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Details

C438S050000, C438S153000, C438S154000, C216S011000, C216S012000, C073S105000, C073S862530, C257SE21176, C257S419000

Reexamination Certificate

active

07344908

ABSTRACT:
The present invention relates to an AFM (atomic force microscope) cantilever including a field effect transistor (FET) and a method for manufacturing the same; and, more particularly, to a method for manufacturing an AFM cantilever including an FET formed by a photolithography process, wherein an effective channel length of the FET is a nano-scale. Therefore, The present invention can easily implement a simulation for manufacturing the AFM cantilever including the FET by accurately controlling the effective channel length. And also, the present invention can manufacture the AFM cantilever including the FET having the effective channel ranging several tens to several hundreds nanometers by applying the low price photolithography device, thereby enhancing an accuracy and yield of the manufacturing process and drastically reducing process costs.

REFERENCES:
patent: 5336369 (1994-08-01), Kado et al.
patent: 5388323 (1995-02-01), Hopson et al.
patent: 5595942 (1997-01-01), Albrecht et al.
patent: 2003-0012108 (2003-02-01), None
patent: 10-0466157 (2003-05-01), None
patent: 10-0466158 (2003-05-01), None
patent: 10-0555045 (2004-12-01), None
patent: 10-0515734 (2005-03-01), None
patent: 10-0515735 (2005-03-01), None
patent: 10-0558376 (2005-03-01), None
English Language Abstract of KR 2003-0012108.
English Language Abstract of KR 10-0466157.
English Language Abstract of KR 10-0466158.
English Language Abstract of KR 10-0515734.
English Language Abstract of KR 10-0555045.
English Language Abstract of KR 10-0558376.
English Language Abstract of KR 10-0515735.
U.S. Appl. No. 11/614,492 (Suh et al.), filed Dec. 21, 2006.

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