Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Physical stress responsive
Reexamination Certificate
2008-03-18
2008-03-18
Lebentritt, Michael (Department: 2812)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
Physical stress responsive
C438S050000, C438S153000, C438S154000, C216S011000, C216S012000, C073S105000, C073S862530, C257SE21176, C257S419000
Reexamination Certificate
active
07344908
ABSTRACT:
The present invention relates to an AFM (atomic force microscope) cantilever including a field effect transistor (FET) and a method for manufacturing the same; and, more particularly, to a method for manufacturing an AFM cantilever including an FET formed by a photolithography process, wherein an effective channel length of the FET is a nano-scale. Therefore, The present invention can easily implement a simulation for manufacturing the AFM cantilever including the FET by accurately controlling the effective channel length. And also, the present invention can manufacture the AFM cantilever including the FET having the effective channel ranging several tens to several hundreds nanometers by applying the low price photolithography device, thereby enhancing an accuracy and yield of the manufacturing process and drastically reducing process costs.
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English Language Abstract of KR 2003-0012108.
English Language Abstract of KR 10-0466157.
English Language Abstract of KR 10-0466158.
English Language Abstract of KR 10-0515734.
English Language Abstract of KR 10-0555045.
English Language Abstract of KR 10-0558376.
English Language Abstract of KR 10-0515735.
U.S. Appl. No. 11/614,492 (Suh et al.), filed Dec. 21, 2006.
Lee Churl Seung
Lee Kyoung Il
Shin Jin-Koog
Suh Moon Suhk
Ahmadi Mohsen
Greenblum & Bernstein P.L.C.
Korea Electronics Technology Institute
Lebentritt Michael
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