Atmospheric process and system for controlled and rapid...

Details Atmospheric process and system for controlled and rapid... Atmospheric process and system for controlled and rapid...

2008-04-29

2008-04-29

Wilczewski, M. (Department: 2822)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S716000

Reexamination Certificate

active

11203524

ABSTRACT:
A system that generates an intense hot gas stream is described to etch a polymer on a substrate used in the manufacture of semiconductor and MEMS devices with no surface damage. The etching process is particularly useful to remove a polymer from relatively high aspect Height-to-Width and Width-to-Height ratio holes that can include trenches, having relatively large aspect ratios for removal of polymers used in connection with the manufacturing of microstructures.

REFERENCES:
patent: 4783695 (1988-11-01), Eichelberger et al.
patent: 5153408 (1992-10-01), Handford et al.
patent: 5288007 (1994-02-01), Interrante et al.
patent: 5302547 (1994-04-01), Wojnarowski et al.
patent: 5314709 (1994-05-01), Doany et al.
patent: 5401687 (1995-03-01), Cole et al.
patent: 5808270 (1998-09-01), Marantz et al.
patent: 5830376 (1998-11-01), Bohlke et al.
patent: 5938944 (1999-08-01), Baughman et al.
patent: 5968283 (1999-10-01), Walraven et al.
patent: 6040546 (2000-03-01), Sorkin
patent: 6158648 (2000-12-01), Mori et al.
patent: 6468917 (2002-10-01), Li et al.
patent: 6568329 (2003-05-01), Robinson
patent: 2004/0089632 (2004-05-01), Park et al.
patent: 61059834 (1986-03-01), None
patent: 9-246252 (1997-09-01), None
patent: WO 97/45856 (1997-12-01), None
patent: WO97/46056 (1997-12-01), None
PCT International Search Report mailed on Nov. 28, 2000 for copending International Patent Application PCT/US00/27113.
Supplementary European Search Report, May 18, 2007, 2 pages.

Affiliated with

Also associated with

Rating

Atmospheric process and system for controlled and rapid... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Atmospheric process and system for controlled and rapid..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Atmospheric process and system for controlled and rapid... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3947196