Atmospheric process and system for controlled and rapid...

Details Atmospheric process and system for controlled and rapid... Atmospheric process and system for controlled and rapid...

2005-10-18

2005-10-18

Wilczewski, M. (Department: 2822)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S730000, C438S795000, C216S067000, C250S492200

Reexamination Certificate

active

06955991

ABSTRACT:
A hot arc-type plasma generating system is described to etch a polymer on a substrate used in the manufacture of semiconductor devices. The etching process is particularly useful to remove a polymer from high aspect ratio holes, that can include trenches, greater than about 10 to 1 and even greater than 50 to 1.

REFERENCES:
patent: 4783695 (1988-11-01), Eichelberger et al.
patent: 5302547 (1994-04-01), Wojnarowski et al.
patent: 5314709 (1994-05-01), Doany et al.
patent: 5830376 (1998-11-01), Bohlke et al.
patent: 5968283 (1999-10-01), Walraven et al.
patent: 6057247 (2000-05-01), Imai et al.
patent: 6467297 (2002-10-01), Bollinger et al.
patent: 6492613 (2002-12-01), Bollinger et al.
patent: 6582617 (2003-06-01), Pong
patent: 2002/0030038 (2002-03-01), Bollnger et al.
patent: 2004/0005785 (2004-01-01), Bollinger et al.
patent: 2004/0055995 (2004-03-01), Westerman et al.
patent: 2004/0097077 (2004-05-01), Nallan et al.
patent: WO 01/23130 (2001-04-01), None
PCT International Search Report mailed on Nov. 28, 2000 for copending International Patent Application PCT/US00/27113.

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