Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2008-04-29
2008-04-29
Wilczewski, M. (Department: 2822)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S716000
Reexamination Certificate
active
07365019
ABSTRACT:
A system that generates an intense hot gas stream is described to etch a polymer on a substrate used in the manufacture of semiconductor and MEMS devices with no surface damage. The etching process is particularly useful to remove a polymer from relatively high aspect Height-to-Width and Width-to-Height ratio holes that can include trenches, having relatively large aspect ratios for removal of polymers used in connection with the manufacturing of microstructures.
REFERENCES:
patent: 4783695 (1988-11-01), Eichelberger et al.
patent: 5153408 (1992-10-01), Handford et al.
patent: 5288007 (1994-02-01), Interrante et al.
patent: 5302547 (1994-04-01), Wojnarowski et al.
patent: 5314709 (1994-05-01), Doany et al.
patent: 5401687 (1995-03-01), Cole et al.
patent: 5808270 (1998-09-01), Marantz et al.
patent: 5830376 (1998-11-01), Bohlke et al.
patent: 5938944 (1999-08-01), Baughman et al.
patent: 5968283 (1999-10-01), Walraven et al.
patent: 6040546 (2000-03-01), Sorkin
patent: 6158648 (2000-12-01), Mori et al.
patent: 6468917 (2002-10-01), Li et al.
patent: 6568329 (2003-05-01), Robinson
patent: 2004/0089632 (2004-05-01), Park et al.
patent: 61059834 (1986-03-01), None
patent: 9-246252 (1997-09-01), None
patent: WO 97/45856 (1997-12-01), None
patent: WO97/46056 (1997-12-01), None
PCT International Search Report mailed on Nov. 28, 2000 for copending International Patent Application PCT/US00/27113.
Supplementary European Search Report, May 18, 2007, 2 pages.
Bollinger Lynn David
Tokmouline Iskander
Jetek, LLC
St. Onge Steward Johnston & Reens LLC
Wilczewski M.
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